 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA652TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The PA652TT is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 2.00.2 0.250.1 6 5 4 2.10.1 1.6 0~0.05 FEATURES * * 2.5 V drive available Low on-state resistance RDS(on)1 = 294 m MAX. (VGS = -4.5 V, ID = -1.0 A) RDS(on)2 = 336 m MAX. (VGS = -4.0 V, ID = -1.0 A) RDS(on)3 = 514 m MAX. (VGS = -2.5 V, ID = -0.5 A) 1 2 3 0.65 0.65 S MAX. 0.8 ORDERING INFORMATION 0.05 S PART NUMBER PACKAGE 6pinWSOF (1620) 0.40.1 PA652TT 0.15 +0.1 -0.05 Marking: WF 1,2,5,6 : Drain 3 : Gate 4 : Source ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg -20 m12 m2.0 m8.0 0.2 1.3 150 -55 to +150 V V A A W W C C Gate Gate Protection Diode Body Diode Drain 0.2 +0.1 -0.05 0.1 M S EQUIVALENT CIRCUIT Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% Note2 2. Mounted on FR-4 board of 5000 mm x 1.1 mm, t 5 sec. 2 Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16204EJ1V0DS00 (1st edition) Date Published September 2002 NS CP(K) Printed in Japan (c) 2002 PA652TT ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = -16 V VGS = -4.0 V ID = -2.0 A IF = 2.0 A, VGS = 0 V TEST CONDITIONS VDS = -20 V, VGS = 0 V VGS = m12 V, VDS = 0 V VDS = -10 V, ID = -250 A VDS = -10 V, ID = -1.0 A VGS = -4.5 V, ID = -1.0 A VGS = -4.0 V, ID = -1.0 A VGS = -2.5 V, ID = -0.5 A VDS = -10 V VGS = 0 V f = 1.0 MHz VDD = -10 V, ID = -1.0 A VGS = -4.0 V RG = 10 MIN. TYP. MAX. UNIT -10 m10 -0.5 1.0 A A V S -1.1 2.4 235 252 385 126 47 17 28 101 80 85 1.1 0.4 0.5 0.93 -1.5 294 336 514 m m m pF pF pF ns ns ns ns nC nC nC V TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS (-) 0 10% VGS 90% IG = -2 mA 50 RL VDD VDD VDS (-) 90% 90% 10% 10% PG. VGS (-) 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G16204EJ1V0DS PA652TT TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.6 PT - Total Power Dissipation - W 100 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Mounted on FR-4 board of 2 5000 m m x 1.1 m m , t 5 sec. 80 60 40 20 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA - 10 PW = 100 s I D (D C ) -1 1 ms R D S (o n ) Lim ited (V G S = -4.5 V) - 0.1 Single P ulse M ounted on F R -4 board of 2 5000 m m x 1.1 m m -1 - 10 - 100 10 m s 100 m s 5s I D (p ulse ) ID - Drain Current - A - 0.01 - 0.1 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W 1000 Single Pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 100 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16204EJ1V0DS 3 PA652TT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -5 Pulsed V GS = -4.5 V -4.0 V FORWARD TRANSFER CHARACTERISTICS - 10 VDS = -10 V P u ls ed ID - Drain Current - A ID - Drain Current - A -4 -1 -3 - 0.1 -2 -2.5 V -1 - 0.01 T A = 1 2 5C 7 5C 2 5C - 25 C - 0.00 1 0 0 - 0.5 -1 - 1.5 -2 - 0.00 01 0 -1 -2 -3 -4 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE - 1.6 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 V D S = -10 V Pulsed T A = -25C 25C 75C 125C VGS(off) - Gate Cut-off Voltage - V V D S = -10 V ID = -250 A - 1.4 10 - 1.2 1 -1 - 0.8 0.1 - 0.6 -50 0 50 100 150 0.01 - 0.01 - 0.1 -1 - 10 Tch - Channel Temperature - C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m 800 Pulsed V GS = -2.5 V, ID = -0.5 A 600 V GS = -4.0 V, ID = -1.0 A 400 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 800 ID = -1.0 A Pulsed 600 400 200 V GS = -4.5 V, ID = -1.0 A 0 -50 0 50 100 150 200 0 0 -2 -4 -6 -8 Tch - Channel Temperature - C VGS - Gate to Source Voltage - V 4 Data Sheet G16204EJ1V0DS PA652TT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 800 V GS = -4.5 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 800 V G S = -4.0 V Pulsed 600 T A = 125C 400 75C 600 T A = 125C 400 75C 200 25C -25C 0 - 0.01 - 0.1 -1 - 10 200 25C -25C 0 - 0.01 - 0.1 -1 - 10 ID - Drain Current - A ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 800 V G S = -2.5 V Pulsed T A = 125C 75C 400 25C -25C 1000 SWITCHING CHARACTERISTICS V DD = -10 V V G S = -4.0 V R G = 10 tr 600 td(on), tr, td(off), tf - Switching Time - ns 100 tf td(off) td(on) 200 0 - 0.01 - 0.1 -1 - 10 10 - 0.1 -1 - 10 ID - Drain Current - A ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE V GS = 0 V Pulsed Ciss, Coss, Crss - Capacitance - pF IF - Diode Forward Current - A VGS = 0 V f = 1.0 M H z 1 100 C iss C oss 0.1 C rss 10 - 0.1 -1 - 10 - 100 0.01 0.4 0.6 0.8 1.0 1.2 1.4 VDS - Drain to Source Voltage - V Data Sheet G16204EJ1V0DS VF(S-D) - Source to Drain Voltage - V 5 PA652TT DYNAMIC INPUT/OUTPUT CHARACTERISTICS -8 ID = -2.0 A VGS - Gate to Source Voltage - V -6 V DD = -4.0 V -10 V -16 V -4 -2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 QG - Gate Change - nC 6 Data Sheet G16204EJ1V0DS PA652TT [MEMO] Data Sheet G16204EJ1V0DS 7 PA652TT * The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
Price & Availability of UPA652TT
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |